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UHF20FCT
Vishay General Semiconductor
www.vishay.com For technical questions within your
region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 89064
Revision: 13-May-08
2
Notes:
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤
40 ms
Notes:
(1) Without heatsink, free air
(2) With infinite heatsink
RATINGS AND CHARACTERISTICS CURVES
(TA
= 25
°C unless otherwise noted)
Maximum reverse recovery time
IF
= 0.5 A, I
R
= 1.0 A,
Irr = 0.25 A
trr
20 25 ns
Maximum reverse recovery time per diode
IF
= 1.0 A, dI/dt = 50 A/μs,
VR = 30 V, Irr
= 0.1 I
RM
trr
28 35 ns
Typical softness factor (tb/ta)
IF
= 10 A, dI/dt = 200 A/μs,
Typical reverse recovery current IVR = 200 V, TJ
= 125 °C
RM
Typical stored charge Qper diode
rr
160 - nC
S0.36- -
7.0 - A
Typical forward recovery time per diode
IF
= 10 A, dI/dt = 80 A/μs,
VFR = 1.1 x VFmax
tfr
150 - ns
ELECTRICAL CHARACTERISTICS (TA
= 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
THERMAL CHARACTERISTICS (TA
= 25 °C unless otherwise noted)
PARAMETER
SYMBOL
UHF20FCT
UNIT
Typical thermal resistance per diode
RθJA
(1)
RθJC(2)
50
4.6
°C/W
ORDERING INFORMATION
(Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
ITO-220AB UHF20FCT-E3/4W 1.74 4W 50/tube Tube
Figure 1. Forward Power Loss Characteristics Per Diode
0
1
2
3
4
5
6
7
8
9
10
11
12
02468
10 12
Average Forward Current (A)Instantaneous Forward Voltage (V)
A
v
erage Po
w
er Loss (
W
)
D = 0.3
D = 0.5
D = 0.8
D = 1.0
D = 0.2
D = 0.1
D = tp/T tp
T
Figure 2. Typical Instantaneous Forward Characteristics Per Diode
1
10
100
0.2 0.4 0.6 0.0.3 0.5 0.7 0.9 1.1 1.38
1.4
1.0 1.2 1.5
Instantaneo
u
s For
w
ard C
u
rrent (A)
TJ
= 175 °C
TJ
= 25 °C
0.1
TJ
= 125 °C
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